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Muting aammc be accomplished by setting Vgg to the pinch-off voltage Vp. The drain bias voltage range is 3 to 5V. Wide Frequency Range GHz? Vofs can be measured at a single reference temperature.
Typical IM3 level vs. The drift error will be less than 0. This method gives an error due to temperature drift of less than 0. Integrated RF power detector? Typical S22 over temperature Figure A typical measured detector voltage versus output power at 18GHz is shown Figure These ratings apply to each individual FET 5. No ground wires are needed since ground connections are made with plated through-holes to the backside of the device.
Typical ESD diode current versus diode voltage for connected diodes in series is shown in Figure An optional output power detector network is also provided. Minor improvements in performance are possible depending ammmc the application. Vofs can either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures and a linear fit used to calculate Vofs at any temperature.
This final package part performance is verified by a functional test correlated to actual performance ammd one or more frequencies 9. The bonding diagram for the recommended assembly is shown in Figure In a finalized package form, Vd1 and Vd2 terminals are commonly connected to the Vdd terminal.
Vofs can be measured before each detector measurement by removing or switching off the power source and measuring Vref – Vdet. Electro Discharge Damage and Control. Negative supply is used for the DC gate biasing.
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Operation in excess of any one of these conditions may result in qmmc damage to this device. Junction operating temperature will directly affect the device MTTF.
Data subject to change. Small signal Gain of 18dB? This data represents package part performances, and does not contain test fixture losses. There are three methods to calculate Vofs: Typical S11 over temperature Figure Broadband Wireless Access including Combinations of supply voltage, drain current, input power, and output power shall ammcc exceed PD.
A single DC gate supply connected to Vg will bias all gain stages. Observe Precautions for handling electrostatic sensitive devices. Input port partially matched For narrowband applications, customer may obtain optimum matching 64008 gain with an additional matching circuit? For maximum life, it is recommended that junction temperatures ajmc maintained at the lowest possible levels.
Typical ESD diode current versus diode voltage for connected diodes in series Figure Typical IM3 level and Ids vs.
AMMC-6408 6-18 GHz 1W Power Amplifier
Typical Gain and Reverse Isolation Figure 2. Frequency range 6 to 18 GHz?
This method gives an error close to the method 1.