Symbol. Parameter. Value. Unit. BFY BFY VCBO. Collector-Base Voltage ( IE = 0). V. VCEO. Collector-Emitter Voltage (IB = 0). V. VEBO. BFY51 datasheet, BFY51 pdf, BFY51 data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose. BFY51 Transistor Datasheet pdf, BFY51 Equivalent. Parameters and Characteristics.
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High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high datazheet speed Applications.
BZX series Voltage regulator diodes. They are designed for high speed. TDA Light position controller. That said, this question could be improved by explaining what, presumably, radio it is used in which would narrow down what possible substitutions could be made.
BFY51 vs BC feature comparison | Findchips
Philips Semiconductors Philippines Inc. Product data sheet Supersedes data of Jan This Datasheet is presented by the m anufacturer. Using a similar search at your favorite parts source I bet you can find some other datashheet which are cheap and available in your area.
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Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Apr 22 7. The information presented in this document bfy511 not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
Characteristic Symbol Rating Unit. Sign up or log in Sign up using Google. Philips Semiconductors, 6F, No.
They are designed for high speed More information. Post as a guest Name. Low voltage NPN power Darlington transistor. Product specification Supersedes data of Sep It might be worth a to share your whole circuit, not just one component of it and b actually reconsider the whole circuit. All leads are isolated More information. High voltage fast-switching NPN power transistor. Email Required, but never shown. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with Datashret information.
Home Questions Tags Users Unanswered. Stress above one or more of the limiting values may cause permanent damage to the device.
DATA SHEET. BFY50; BFY51; BFY52 NPN medium power transistors DISCRETE SEMICONDUCTORS Apr 22
Product specification Supersedes data of Aug Exposure to limiting values for extended periods may affect device reliability. No liability will be accepted by the publisher for any consequence of its use. General description NPN general-purpose transistors in small plastic packages.
Global Network Access International Access Rates We know that you need to communicate with your partners, colleagues and customers around the world. Product overview Type number More information. A linear amplifier 1.
BFY51 데이터시트(PDF) – STMicroelectronics
NPN medium power transistor. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Description in a plastic package using TrenchMOS technology.